A current mirror circuit is often used in Gm-cells and current amplifiers in order to obtain high linearity and high accurate current gain. However, it is expected that a threshold voltage mismatch between transistors pair in the current mirror affects these performances in recent scaled technologies. In this paper, negative effects caused by the mismatch in the current mirror are considered and a new calibration technique for the mismatch issues is proposed. In the current mirror without the mismatch, the high-linearity operation is provided by distortion canceling under the condition that the transistors have the same operating points. The threshold voltage mismatch disturbs the cancellation, therefore the distortion is appeared. In order to address the issue, a new calibration technique using a backgating effect is considered. This calibration can reduce the threshold voltage mismatch directly by controlling the body bias voltage with DACs. According to simulation results with Monte Carlo sampling in 65nm CMOS process, owing to the proposed calibration, the worst HD2 and HD3 are improved by 18.4dB and 11.6dB, respectively. In addition, the standard deviation of the current gain is reduced from 399mdB to 34mdB.

This paper reviews and discusses a brief history of Nyquist ADCs. Bipolar flash ADCs for early development stage of HDTV and digital oscilloscopes, a Bi-CMOS two-step flash ADC using resistive interpolation for home HDTV receivers, a CMOS two-step flash ADC using capacitive interpolation for handy camcorders, pipelined ADCs using CMOS operational amplifiers, CMOS flash ADCs using dynamic comparator and digital offset compensation, SAR ADCs using low noise dynamic comparators and MOM capacitors, and hybrid ADCs are reviewed.

This paper presents two CMOS power amplifiers which realize frequency band selection. Each PA consists of two stages and uses a transformer to obtain large output power with high efficiency. Furthermore, the capacitive cross-coupling at the second stage reduces a die area of the bypass capacitance. The proposed PAs are fabricated by a 0.18 µm CMOS process. With a 3.3 V supply, the PAs achieve a output 1-dB compression point of larger than 25 dBm from 2.2 GHz to 5.4 GHz, maximum of peak power added efficiency (PAEpeak) are 30% and 27% for 2-band and 3-band PAs, respectively. The proposed PAs have advantages which are a band-selectable ability within a desired frequency range and a realization of CMOS PA with high power efficiency.

In this paper, a capacitive-cross-coupling common-gate (CCC-CG) LNA using capacitive feedback is proposed to improve the noise figure (NF). In the conventional CCC-CG LNA, the transconductance gm is determined by the input-matching condition while a lager gm is required to improve NF. gm of the proposed LNA can be increased and NF can be improved by using the added capacitive feedback. The analytical calculation shows that the proposed LNA can perform better than the conventional CCC-CG LNA. In the measurement results using a 0.18-µm CMOS technology, the gain is 10.4–13.4 dB, NF is 2.7–2.9 dB at 0.8–1.8 GHz, and IIP3 is -7 dBm at 0.8 GHz. The power consumption is 6.5 mW with a 1.8-V supply.

This paper discusses issues in the design of analog-to-digital converters (ADCs) in nanoscale CMOS and introduces some experimental designs incorporating techniques to solve these issues. Technology scaling increases the maximum conversion rate, but it decreases the gain and the SNR. To maintain a high SNR level despite the low-voltage operation, the power consumption needs to be increased. Because of lowered supply voltages, the design of circuits based on operational amplifiers (OpAmps) has become more difficult. Designs without OpAmps have therefore received more attention. One way of realizing low-voltage pipeline ADCs is by using comparator-controlled current sources, instead of conventional OpAmps. Furthermore, successive approximation ADCs and sub-ranging ADCs do not require OpAmps and are therefore suitable for low-voltage operation. ADC designers are now searching for suitable architectures for future nanoscale CMOS processes.

This paper describes low-voltage and low-power (LV/LP) circuit design for both analog LSI's and digital LSI's which are used in mixed analog/digital systems in portable equipment. We review some LV/LP circuits used in digital LSI's, such as general logic gate, DSP, and DRAM, and others used in analog LSI's, such as operational amplifiers, video-signal processing circuits, A/D and D/A converters, filters, and RF circuits, along with a wide range of items used in recently developed LSI's. Since analog circuits have fundamental difficulties for reducing the operating voltage and the power consumption, in spite of recent progress in LV/LP circuit techniques, these difficulties will be a major issue for decreasing the total power consumption of some mixed analog/digital systems used in portable equipment.

We present self-calibration techniques for an interleaved SAR (Successive Approximation Register) ADC. The calibration technique is based on hardware corrections for linearity of single stage, gain error and mismatch errors of parallel ADCs. The 4-interleaved 11-bit ADC has been fabricated in a 0.18-µm CMOS process. Using the calibrations, measurement and calculation results show that the differences of ramp characteristic among the 4-interleaving ADC can be decresased to under 0.63 LSB.

The analog IC technology, might sound old-fashioned, is still important for the future wireless systems such as 4G cellular phone systems, broadband wireless networkings, and wireless sensor networkings. The analog features and issues of the scaled CMOS transistor, the basic issue and the technology trend for the ADC as an important building block of wires systems, and the feature of the digital RF architecture proposed recently are reviewed and discussed. Higher speed and lower power consumption are expected for low SNR systems along with the further technology scaling. However, the high SNR system is not realized easily due to a decrease of signal voltage. One of the important technology trends is the digitalization of RF signal to realize the system flexibility, robustness, area shrinking, and TAT shortening.

This paper derives a maximum lock range of an injection locked ring oscillator in a direct injection method and presents an injection locked charge-pump phase-locked loop (CPPLL) with a replica of a ring oscillator. The proposed injection-locked PLL separates the injection-locked VCO from the continuous phase-tracking loop of the PLL such that can provide stable lock-state maintenance and tolerance to temperature and supply voltage variation. The measurement results show that the proposed injection-locked PLL can be tolerable to voltage variation of 11.2% in supply voltage of 1.2V. In-band noises of the injection-locked oscillator at offset frequencies of 10kHz and 100kHz are -108.2dBc/Hz and -114.6dBc/Hz, respectively.

60GHz wireless communication requires analog baseband circuits having a bandwidth of about 1GHz. This paper presents a wide bandwidth current-mode low pass filter technique which involves current amplifiers, resistors and capacitors. The proposed current-mode filter is obtained by replacing an integrator employing an op-amp with another integrator employing a current amplifier. With the low input impedance current amplifier having little variation of the input impedance, the proposed filter is expected to improve linearity and power efficiency. The proposed current amplifier which employs super source follower topology with complementary input is suitable for the filter because of its class AB operation. Although simulation results shows the conventional current amplifier which employs super source follower topology without the complementary input has 12Ω variation and 30Ω input impedance, the proposed current amplifier has 1Ω variation and 21Ω input impedance. A fourth order 1GHz bandwidth filter which involves the proposed current amplifiers is designed in a 65nm CMOS technology. The filter can achieve IIP3 of 1.3dBV and noise of 0.6mVrms with power consumption of 13mW under supply voltage of 1.2V according to simulation results with layout parasitic extraction models. Active area of the filter is 380μm×170μm.

This paper present a 20-GHz differential push-push voltage controlled oscillator (VCO) for 60-GHz frequency synthesizer. The 20-GHz VCO consists of a 10-GHz in-phase injection-coupled QVCO (IPIC-QVCO) with tail-filter and a differential output push-push doubler for 20-GHz output. The VCO fabricated in 65-nm CMOS technology, it achieves tuning range of 3 GHz from 17.5 GHz to 20.4 GHz with a phase noise of -113.8 dBc/Hz at 1 MHz offset. The core oscillator consumes up to 71 mW power and a FoM of -180.2 dBc/Hz is achieved.

We propose a statistical processing method to reduce the time of chip test of high-resolution and low-speed analog-to-digital converters (ADCs). For this kinds of ADCs, due to the influence of noise, conventional histogram or momentum method suffers from long time to collect required data for averaging. The proposed method, based on physically weighing the ADC, intending to physical weights in ADC/DAC under test. It can suppress white noise to 1/22 than conventional method in a case of 10bit binary ADC. Or it can reduce test data to 1/8 or less, which directly means to reduce measuring time to 1/8 or less. In addition, it earns complete Integrated Non-Linearity (INL) and Differential Non-linearity (DNL) even missing codes happens due to less data points. In this report, we theoretically describe how to guarantee missing codes at lacked measured data points.

A continuous-time (CT) ΔΣ analog-to-digital converter (ADC) is a high resolution, wide-bandwidth ADC. A Gm-C filter is suitable for low power consumption and its frequency characteristics for a loop filter of the ADC. However, in practice, distortion generated in the Gm-C filter degrades the SNDR of the ADC, therefore a high-linearity Gm-cell with low power consumption is needed. A flipped voltage follower (FVF) Gm-cell is also used as a high-linearity Gm-cell, but distortion is caused by variation of drain-source voltage of its input transistors. In this paper, a new high-linearity Gm-cell is proposed for the CT ΔΣ ADC in order to address this problem. A proposed topology is a combination of a FVF and a cascode topology. The inserted transistors in the proposed Gm-cell behave as cascode transistors, therefore the drain-source voltage variation of the input transistor and a PMOS transistor for current source which causes distortion is suppressed. Simulation results show the proposed Gm-cell can realize the same linearity as the conventional Gm-cell with reducing 36% power consumption. A 20MHz-bandwidth CT ΔΣ ADC employing the proposed Gm-cells achieves SNDR of 72.4dB with power consumption of 6.8mW. Active area and FoM of the ADC are, respectively, 250μm × 220μm and 50fJ/conv.-step in 65nm CMOS process.

A fully synthesizable all-digital phase-locked loop (AD-PLL) with a stochastic time-to-digital converter (STDC) is proposed in this paper. The whole AD-PLL circuit design is based on only standard cells from digital library, thus the layout of this AD-PLL can be automatically synthesized by a commercial place-and-route (P&R) tool with a foundry-provided standard-cell library. No manual layout and process modification is required in the whole AD-PLL design. In order to solve the delay mismatch issue in the delay-line-based time-to-digital converter (TDC), an STDC employing only standard D flip-flop (DFF) is presented to mitigate the sensitivity to layout mismatch resulted from automatic P&R. For the stochastic TDC, the key idea is to utilize the layout uncertainty due to automatic P&R which follows Gaussian distribution according to statistics theory. Moreover, the fully synthesized STDC can achieve a finer resolution compared to the conventional TDC. Implemented in a 28nm fully depleted silicon on insulator (FDSOI) technology, the fully synthesized PLL consumes only 480µW under 1.0V power supply while operating at 0.9GHz. It achieves a figure of merit (FoM) of -231.1dB with 4.0ps RMS jitter while occupying 0.0055mm2 chip area only.

This paper proposes a performance model for design of pipelined analog-to-digital converters (ADCs). This model includes the effect of overdrive voltage on the transistor, slewing of the operational amplifier, multi-bit structure of multiplying digital to analog converter (MDAC) and technology scaling. The conversion frequency of ADC is improved by choosing the optimum overdrive voltage of the transistor, an important consideration at smaller design rules. Moreover, multi-bit MDACs are faster than the single-bit MDACs when slewing occurs during the step response. The performance model of pipelined ADC shown in this paper is attractive for the optimization of the ADC's performances.

We present a 10-bit 1-MS/s successive approximation analog-to-digital converter core including a charge redistribution digital-to-analog converter and a comparator. A new linearity calibration technique enables use of a nearly minimum capacitor limited by kT/C noise. The ADC core without digital control blocks has been fabricated in a 0.18-µm CMOS process and consumes 118 µW at 1.8 V power supply. Also, the active area of ADC core is realized to be 0.027 mm2. The calibration improves the SNDR by 13.4 dB and the SFDR by 21.0 dB. The measured SNDR and SFDR at 1 kHz input are 55.2 dB and 73.2 dB respectively.

In order to realize highly accurate analog to digital conversion for EDTV, HDTV, and video-camera with low power consumption, a monolithic video-rate 8 bit parallel A/D converter has been developed using high-accuracy bipolar transistors with trench isolation. The A/D converter can digitize wide band video signals up to 10 MHz with high signal to nose ratio (45 dB at 10 MHz input) at high conversion rate of 40 MHz. Notwithstanding it contains 7000 bipolar transistors, it consumes only 250 mW and is formed with small chip size (2.73.9mm2).

A distribution of offset voltage of transistor pairs having fine pattern emitter down to 0.5 µm wide required for a parallel A/D converter can digitize at more than 200 MHz were measured. Moreover, contributions of transistor parameters to offset voltage and a realization of the ultra-high speed A/D converter were discussed. As the result, it was shown that the main transistor parameter contributes to the offset voltages is a fluctuation of a current gain, and a contribution of a emitter contact resistance was not so large. And the realization of 6 bit, 1 GHz or 8 bit, 750 MHz A/D converter was obtained.